inchange semiconductor product specification silicon pnp darlington power transistors tip115/116/117 description ? with to-220c package ? darlington ?high dc current gain ? low collector saturation voltage ? complement to type tip110/111/112 applications ?for industrial use pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit tip115 -60 TIP116 -80 v cbo collector-base voltage tip117 open emitter -100 v tip115 -60 TIP116 -80 v ceo collector-emitter voltage tip117 open base -100 v v ebo emitter-base voltage open collector --5 v i c collector current-dc -2 a i cm collector current-pulse -4 a i b base current-dc 50 ma t c =25 ?? 50 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp darlington power transistors tip115/116/117 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit tip115 -60 TIP116 -80 v ceo(sus) collector-emitter sustaining voltage tip117 i c =-30ma, i b =0 -100 v v cesat collector-emitter saturation voltage i c =-2a ,i b =-8ma -2.5 v v be base-emitter on voltage i c =-2a ; v ce =-4v -2.8 v tip115 v cb =-60v, i e =0 TIP116 v cb =-80v, i e =0 i cbo collector cut-off current tip117 v cb =-100v, i e =0 -1 ma tip115 v ce =-30v, i b =0 TIP116 v ce =-40v, i b =0 i ceo collector cut-off current tip117 v ce =-50v, i b =0 -2 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2 ma h fe-1 dc current gain i c =-1a ; v ce =-4v 1000 h fe-2 dc current gain i c =-2a ; v ce =-4v 500 c ob output capacitance i e =0 ; v cb =-10v,f=0.1mhz 200 pf
inchange semiconductor product specification 3 silicon pnp darlington power transistors tip115/116/117 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon pnp darlington power transistors tip115/116/117
|
